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Abstract
We report on the high-performance characteristics from superluminescent di- odes (SLDs) based on four-stack InAs/InGaAlAs chirped-barrier thickness quantum dash (Qdash) in a well structure. The active region exhibits a measured broad gain spectrum of � 140 nm, with a peak modal gain of � 41 cm � 1 . The noncoated two-section gain- absorber broad-area and ridge-waveguide device configuration exhibits an output power of 9 20 mW and 9 12 mW, respectively. The corresponding � 3-dB bandwidths span � 82 nm and � 72 nm, with a small spectral ripple of G 0.2 dB, related largely to the con- tribution from dispersive height dash ensembles of the highly inhomogeneous active region. These C-L communication band devices will find applications in various cross- disciplinary fields of optical metrology, optical coherent tomography, etc.
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