High peak power passively Q‐switched 2 μm solid‐state laser based on a MoS2 saturated absorber

Abstract

AbstractA 2 μm passively Q‐switched Tm:YAP solid‐state laser with MoS2 as saturated absorber was demonstrated in this work. MoS2 two‐dimensional materials were prepared by using the method of chemical vapor deposition. The laser achieved high peak power of 21.2 W and high single pulse energy of 19.5 μJ, while maintaining a short pulse width of 916 ns. This is the first time that the peak power of a Tm:TAP solid‐state laser based on a MoS2 saturated absorber has reached 21.2 W. The beam quality factor was M2x = 1.08 and M2y = 1.10.