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Abstract
Peak current densities two times higher than the best values reported for GaAs-based resonant tunneling diode (RTD) structures have been obtained from metal-organic chemical-vapor deposition (MOCVD)-grown deep-quantum-well strained-layer In0.3Ga0.7As/Al0.8Ga0.2As RTDs. By growing on nominally exact (100) +/−0.1° GaAs substrates, we have been able to obtain smooth interfaces between the strained-layer In0.3Ga0.7As quantum well and Al0.8Ga0.2As barriers, which, in turn, enabled us to benefit from resonant tunneling through the second resonant energy level of In0.3Ga0.7As/Al0.8Ga0.2As structures. Peak current densities in excess of 300 kA/cm2, and peak-to-valley current ratios as high as 3:1, at 300 K, have been obtained from structures with 14-Å-thick barriers and a 57-Å-thick well.
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