Abstract
Tunable twin-guide laser diodes with improved lateral current injection structure and high output power are reported. By optimising the doping profile of the n-InP layer laterally surrounding the buried stripe, inherent leakage currents are effectively minimised. Thereby, the carrier injection efficiency of the laser diode is significantly increased and high output powers of up to 24 and 3.3 mW are obtained at operation temperatures of 20 and 80°C, respectively.
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