Abstract
AbstractDue to the unique structure and properties, the 2D transition metal dichalcogenides attract extensive research interest. Especially, the 2D MoS2 film with high photoelectric response makes important research progress in the field of the photodetection and image sensing. However, at present, most of the 2D material image sensors are passive pixel structures, and the interfering noise of the external readout circuit can easily lead to a decrease in the actual detection rate of the sensors. Here, a microlithographic Y‐MoS2 photodetector, which integrates three identical MoS2 photosensitive units by micro‐lithographing a mono‐layer MoS2, is reported. Compared with the MoS2 photodetector with only one photosensitive unit, the Y‐MoS2 photodetector has the stronger output and anti‐noise ability. In the image sensing test, the peak signal to noise ratio (PSNR) and structural similarity (SSIM) of output images are increased by ≈1.9 and 3 times, respectively. It provides a certain reference for the preparation of high‐output 2D material photodetectors by microlithography.
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