Abstract
Bipolar semiconductor device 2D FDTD mod- elling suited to parallel computing is investigated in this paper. The performance of a second order explicit approxi- mation, namely the Nessyahu-Tadmor scheme (NT2) associ- ated with the decomposition domain method, are compared to a classical quasi-linear implicit one based on the Alter- nating Direction Implicit method (ADI). The comparison is performed both from the numerical stability point of view by means of drift-diffusion and energy-momentum simula- tions and from the computation efficiency point of view. The test structure is a millimetre-wave IMPATT diode the RF as well as internal operation of which is highly non linear. The results demonstrate that high order explicit approxima- tions compete with implicit approximations and allow the development of efficient models well suited to the parallel computation.
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