Abstract
The authors report on the current-voltage (I-V) characteristic under forward biases obtained in low leakage, small size p-(In,Ga)N-GaN-n multiquantum well diodes. Under barrier illumination, the devices present a high optical response with capabilities to detect optical powers in the pW range without further amplification. This response is attributed to the screening of the internal electric fields. Recombination times of a few seconds are found to be associated to this mechanism. Moreover, a step-like feature is found in the I-V characteristic before the diode turn-on voltage. Our model proposes tunneling current through the multiquantum-well structure as responsible of this feature. Fast modulation of the tunneling effect under barrier illumination is used to evaluate the detection of low photon fluxes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
