Abstract

Indium(III) sulfide has recently attracted much attention due to its potential in optical sensors as a photoconducting material and in photovoltaic applications as a wide band gap material. On the other hand, optical absorption properties are key parameters in developing photosensitive photodetectors and efficient solar cells. In this work, we show that indium sulfide nanorod arrays produced by the glancing angle deposition technique have superior absorption and low reflectance properties compared to conventional flat thin film counterparts. We observed an optical absorption value of approximately 96% for nanorods at wavelengths <500 nm in contrast to 79% for conventional thin films of indium sulfide. A superior photoconductivity (PC) response as high as about 40% (change in resistance upon illumination) was also observed in nanorod samples. This is mainly believed to be due to their high optical absorption, whereas only less than 1% PC change was detected in conventional thin films. We give a preliminary description of the enhanced light absorption properties of the nanorods by using the Shirley-George model, which predicts diffusion of light as a function of the roughness of the surface.

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