Abstract
High on-off ratio and high responsivity was obtained in a novel integrated optically controlled HEMT. The integrated structure of the device was composed of a p-i-n photodiode region and a HEMT region. These two regions were bonded using direct wafer bonding technique. When a laser light with a wavelength of 1.55 /spl mu/m was irradiated on the absorption region, on-off ratio of 12 dB and a responsivity of more than 300 A/W was obtained. This device is very attractive as the high efficiency optoelectronic (OE) transformer directly integrated on the LSI circuits.
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