Abstract
This paper discusses the production and investigation of novel graphene switches by gating through an electrical double layer (EDL). Controlled voltage biases across a liquid dielectric and graphene induce electrochemical reactions within the dielectric and produce high electric fields in an EDL at the surface of graphene. As the electrochemical reactions occur within the dielectric, the EDL strength separates the electrochemically-produced ions based on their polarity, and provides the necessary molecular activation and deactivation energies to form weak, reversible molecular bonds between the produced ions and graphene. The reversible bonds between the ions and graphene are used to dynamically alter the electronic transport through graphene, which introduces an exciting assortment of device possibilities. Whereas traditional graphene devices are unuseful for electronic switches or digital logic due to an insufficient bandgap of graphene, the presented graphene electrochemical field-effect transistors (GEC-FETs) exhibit ON-OFF ratios larger than 104 with OFF-resistances as high as 10 $\text{M}\Omega $ . Channel current, gate voltage, and dielectric medium are varied and compared to show their effect on device performance. The presented device and associated techniques show potential for integration in graphene digital-logic architectures.
Highlights
IntroductionIts ultra-high carrier mobility, zero bandgap, and high tensile strength enable the development of novel devices such as flexible sensors, broadband detectors, and piezoresistive devices [1]–[3]
Graphene is renowned for its unique physical, electrical, and thermal properties
At VG > 2V the device starts to operate differently, and exhibits a sharp reduction in channel current. This phenomenon continues until the gate voltage passes a certain threshold of opposite polarity (−2V); at this point the characteristic hole-conduction branch of graphene can be seen, and the graphene device returns to typical operation [19]
Summary
Its ultra-high carrier mobility, zero bandgap, and high tensile strength enable the development of novel devices such as flexible sensors, broadband detectors, and piezoresistive devices [1]–[3]. Despite these remarkable properties, there is still an abundance of unexplored research areas for graphene. The monolayer structure of graphene allows it to be sensitive to electrostatic perturbations at its surface [5]. This observation has led to developments in graphene-based chemical
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