High on/off Current Ratio in Dual in-Plane Gate Spin Transistor Based on the VB Defect Hexagonal BN

Abstract

With the size of devices based on Si technology approaching its physical limit, the electronics industry is looking for technologies and materials for next-generation electronic devices. In this work, the two-dimensional B vacancy (VB) hexagonal (h)-BNs have been systematically investigated and a dual in-plane gate spin transistor based on the VB defect h-BN is proposed. The results show that the VB defect h-BN has a dynamically stable half-metal property with a large spin band gap 4.66 eV. Interestingly, we also find the VB defect h-BN nanoribbon can transfer from a spin semiconductor to a half-metal due to the π electrons transferring of N located near VB defect under the in-plane external electric field. Moreover, the on/off current ratio of the spin transistor based on the VB defect h-BN can reach 4.18 × 104. Our results may provide a promising approach to build the dual in-plane-gate spin transistor and have potential applications in spin devices.