Abstract
An InGaAs quantum dot (QD) laser diode with 19-stacked QDs separated by 20 nm-thick GaAs spacers was fabricated using an ultrahigh-rate molecular beam epitaxial growth technique, and the laser characteristics were evaluated. A 19-stacked simple broad area QD laser diode was lased at the 1000 nm waveband. A net modal gain of 103 cm(-1) was obtained at 2.25 kA/cm(2), and the saturated modal gain was 145.6 cm(-1); these are the highest values obtained to our knowledge. These results indicate that using this technique to highly stack QDs is effective for improving the net modal gain of QD lasers.
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