Abstract
The structure and performance characteristics of a GaAs surface emitting laser (SEL) diode and a 2-D array of SELs is reported. The SEL has a very short optical cavity with a distributed feedback structure, and emits light perpendicular to the wafer surface. The laser shows low threshold current and has an estimated high frequency response of tens of GHz. A 2-D array of SELs with 6 x 16 elements was designed and demonstrated.
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