Abstract
We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm2/V s. The 2DEG density was tunable at 0.4–3.7×1013/cm2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.
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