Abstract
Highly conducting and transparent titanium (Ti)-doped indium oxide (In2O3) films were deposited on sapphire substrate by ablating the sintered In2O3 target containing 1–10 wt.% TiO2 with a KrF excimer laser (λ=248 nm and pulsed duration of 20 ns). The effect of growth temperature from room temperature to 600 °C and oxygen pressure (1.0×10−4–2.5×10−7 bar) has been studied by analyzing structural, optical, and electrical properties of these films. The conductivity, carrier concentration and mobility of the films grown at 600 °C are 10,858 S cm−1, 4.3×1020 cm−3 and 159 cm2 V−1 s−1 respectively. This is the highest mobility ever obtained in doped In2O3 films.
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