Abstract
Thin-film transistors based on aligned carbon nanotubes (CNTs) were fabricated by directly growing highly ordered CNTs on silicon dioxide surface. The transistor shows a pronounced field effect. Electric transport through the aligned carbon nanotubes is dominated by the holes at room temperature. A hole mobility (μp) of the CNT thin-film transistor was estimated to be as high as 61.6 cm2/V s. Such a mobility is comparable to that of heavily doped n-Si and is larger than individual CNT field-effect transistor. Thus, it reveals a potential application of the aligned CNTs in electronics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
