Abstract
InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm2/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.
Highlights
Indium Antimonide (InSb) is widely used in magnetic field sensors, in thermal imaging cameras and in infrared detectors due to its high carrier mobility.1–6 Generally, as InSb layer with high carrier mobility is obtained by epitaxial growth on single-crystal substrate using semiconductor process such as molecular beam epitaxy (MBE), the size is limited due to the high fabrication cost
InSb films were subjected to blue laser diode annealing (BLDA) in place of rapid thermal annealing (RTA) on glass to be applied on flexible sheet as a functional sensor system on panel, and the crystallinity, composition and electrical properties of the films were investigated
It is considered as InSb films were crystalized after BLDA
Summary
Indium Antimonide (InSb) is widely used in magnetic field sensors, in thermal imaging cameras and in infrared detectors due to its high carrier mobility. Generally, as InSb layer with high carrier mobility is obtained by epitaxial growth on single-crystal substrate using semiconductor process such as molecular beam epitaxy (MBE), the size is limited due to the high fabrication cost. On the other hand, fabricating InSb film on glass substrate has high potential from the perspective of low-cost process and functional applications as a system on panel which is widely applied to functional display systems. In the Hall device fabrication process, InSb film deposited on mica substrate is thermally annealed to crystallize it. As the sheet mica is a natural material of limited source and by its high commercial demand, fabrication cost on mica substrate is becoming expensive. In this case, glass substrate is a preferable candidate. InSb films were subjected to BLDA in place of RTA on glass to be applied on flexible sheet as a functional sensor system on panel, and the crystallinity, composition and electrical properties of the films were investigated
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