Abstract
P-channel Si 1-x Ge x MOSFETs with peak Ge content x=0.3, 0.4, and 0.5 have been fabricated via MBE and experimentally characterized from room temperature down to 5K. Mobility enhancements relative to identically processed Si controls were largest at the lowest temperatures. The highest mobility measured, μ FE =1622 cm 2 /V.sec for the x=0.3 SiGe device, was approximately a factor of four higher than the mobility of the Si control devices. Peak mobility decreased as the fraction of Ge in the SiGe channel layer increased for the range of concentrations studied here
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