Abstract
An enhancement-mode high-mobility p-channel metal-oxide-semiconductor field-effect-transistor (MOSFET) is fabricated on strained Si layer for the first time. A biaxially strained thin Si layer is pseudomorphically grown on a relaxed GeSi buffer on Si substrate by molecular beam epitaxy (MBE). MOSFETs are fabricated using conventional Si process technology. It is found that low-field channel mobility of PMOSFET on strained Si is 50% higher than that of PMOSFET on bulk Si.
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