High mobility organic thin film transistors based on monocrystalline rubrene films grown by low pressure hot wall deposition

Abstract

Monocrystalline rubrene (5,6,11,12-tetraphenylnaphthacene) films with thickness between 1 and 10 μm and grain sizes as large as 100 μm×2 mm were deposited on thin film transistor substrates at rates ∼500 nm/min by a low pressure and hot wall deposition method. Organic thin film transistors with these high quality thin films as active channels have field effect mobility as high as 2.4 cm2/V s and ON/OFF current ratios around 106. The morphology and crystallinity of rubrene films under different deposition conditions were also studied to determine the optimal film deposition conditions.