Abstract
The transport properties of a three-dimensional hole gas were investigated in wide parabolic quantum wells grown by molecular beam epitaxy on top of GaAs(311)A substrates. The p-type doping was performed using silicon and the parabolic potential was achieved with the digital-alloy technique. Hall-effect and Shubnikov–de Haas measurements carried out at low temperature revealed that the carrier mobility was more than twice higher than the one usually obtained from similar samples grown on GaAs(100) substrates using beryllium.
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