Abstract
The transport properties of a three-dimensional hole gas were investigated in wide parabolic quantum wells grown by molecular beam epitaxy on top of GaAs(311)A substrates. The p-type doping was performed using silicon and the parabolic potential was achieved with the digital-alloy technique. Hall-effect and Shubnikov–de Haas measurements carried out at low temperature revealed that the carrier mobility was more than twice higher than the one usually obtained from similar samples grown on GaAs(100) substrates using beryllium.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.