Abstract
The surface charge carrier transport of electrons in accumulation mode insulated gate FET’s fabricated on [100] oriented samples of semi-insulating InP has been investigated, both as a function of surface and dielectric preparation as well as of temperature over the range of 85 to 300 K. Results of these studies indicate that room temperature field-effect mobilities as large as 4200 cm2/V s and effective mobilities of 3300 cm2/V s can be achieved in the linear region on material whose bulk Hall mobility does not exceed 3000 cm2/V s.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
