High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Abstract

The electrical characteristics of HfO2-based n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) and metal-oxide-semiconductor capacitors (MOSCAPs) on high indium content In0.53Ga0.47As channel layers are presented. N-channel MOSFETs with a germanium (Ge) interfacial passivation layer (IPL) show maximum mobility 3186 cm2/V s from split capacitance-voltage (C-V) method and the normalized drain current (to the channel length of 1 μm) of 753 mA/mm at Vg=Vth+2 V and Vd=2 V. On the contrary, MOSFETs without a Ge IPL or with high temperature post-metal annealing (PMA) exhibit inferior characteristics. MOSCAPs on n-type In0.53Ga0.47As layers demonstrate excellent C-V characteristics including low C-V frequency dispersion and low dielectric leakage current.