High-Mobility Ga-Polarity GaN achieved by NH3-MBE

Abstract

ABSTRACTGaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm2/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.