Abstract
Amorphous, sol-gel processed, indium gallium zinc oxide (IGZO) transistors on plastic substrate with a printable gate dielectric and an electron mobility of 4.5 cm2/(V s), as well as a mobility of 7 cm2/(V s) on solid substrate (Si/SiO2) are reported. These performances are obtained using a low temperature pulsed light annealing technique. Ultraviolet (UV) pulsed light system is an innovative technique compared to conventional (furnace or hot-plate) annealing process that we successfully implemented on sol-gel IGZO thin film transistors (TFTs) made on plastic substrate. The photonic annealing treatment has been optimized to obtain IGZO TFTs with significant electrical properties. Organic gate dielectric layers deposited on this pulsed UV light annealed films have also been optimized. This technique is very promising for the development of amorphous IGZO TFTs on plastic substrates.
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