Abstract
An (Al,Ga)As heterostructure consisting of a 10 nm wide GaAs single quantum well and an optimized AlAs/GaAs type-II-superlattice barrier is fused onto a new LiNbO3 substrate by epitaxial lift-off and subsequent wafer bonding. X-electrons formed in the superlattice barrier effectively screen the high mobility electrons in the single quantum well from electronic defects arising at the new hybrid interface. Thus, the electron density as well as its high electron mobility can be preserved in the hybrid system.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
