High Mobility, Air Stable, Organic Single Crystal Transistors of an n‐Type Diperylene Bisimide

Abstract

Recently, some impressive progress has been made by functionalization of (hetero-)acenes, thiophenes, and arylenes with electron-defi cient constituents. [ 3–5 ] However, the development of air-stable, high mobility, n-type organic semiconductors for organic electronics is still highly emergent. The mobility of organic semiconductors depends on the effi ciency of charge transport from one molecule to another. Hence, some organic semiconductors with dense molecule packing always give high mobility. [ 6 ] As to the stability of organic compounds, it is believed that the highest occupied molecular orbital (HOMO) of p-type organic semiconductors should be more negative than –5.0 eV, e.g., locating at –5.0 to –6.0 eV, and the lowest unoccupied molecular orbitals (LUMO) of n-type organic semiconductors are best located between –4.0 and –4.5 eV, for anti-oxidation in air. [ 2 , 7 ] We have acknowledged these requirements and believe that perylene bisimides (PBIs) will fi t as candidates because of their reasonable electron acceptor ability, [ 8 ] and have been focusing on the expansion of the chemistry of perylene bisimides (PBIs) by a combination of Ullmann coupling and C–H transformation for some time, and have developed a facile strategy to synthesize fully conjugated, triply linked, diperylene bisimides, [ 8 ] conferring the expanded