High minority carrier mobility and electronic diffusion length in annealed GaInAsSb/GaSb active layer in Vertical Cavity Surface Emitting Laser (VCSEL)

Abstract

Owing to its important role as an active layer for Vertical Cavity Surface Emitting laser (VCSEL). We studied the transport properties in annealed GaInAsSb /GaSb by means of PTD technique. We remark that annealing time improve significantly the diffusion length and minority carrier mobility. For an annealed time duration of 60 min the diffusion length reach 25 µm (3.9%) and the minority carrier mobility reach 3673 cm2/V. (3.4%).We have observed that surface recombination velocity (SRV) decreased in respect of annealing time and was found to be 1450 m / s (± 3.6). Unfortunately, interface recombination velocity (IRV) is highly increased from 1196 m / s (± 5) to 6000 m/s (5%) for GaInAsSb as grown to that annealed during 60 min.