Abstract
Higher minority carrier lifetimes (76 μs) were measured in Ga and Ge codoped Czochralski-silicon (CZ-Si) crystal compared to Ga-doped CZ-Si (28 μs). The minority carrier lifetime increase was associated with a decrease in etch pit density related to grown-in microdefects (GMD) in as-grown CZ-Si with increasing Ge concentration. Furthermore, oxygen (O) precipitation was enhanced in CZ-Si by increased Ge concentration, but this had a lesser limiting influence on minority carrier lifetime. The mechanism by which Ga and Ge codoping affects GMD suppression and enhances O precipitation in CZ-Si is discussed on the basis of the behavior of Ge-vacancy-O related complexes.
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