High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy**Project supported by the National Natural Science Foundation of China (Grant Nos. 61774130 11474248, 61176127, 61006085, 61274013, and 61306013, the Key Program for International Science and Technology Cooperation Projects of China (Grant No. 2011DFA62380), and the Ph. D. Programs Foundation of the Ministry of Education of

Abstract

In this paper, high material quality Al0.4In0.6AsSb quaternary alloy on GaSb substrates is demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray diffraction, Fourier transform infrared (FTIR) spectrometer, and atomic force microscope (AFM). The x-ray diffraction exhibits high order satellite peaks with a measured period of 31.06 Å (theoretical value is 30.48 Å), the mismatch between the GaSb substrate and AlInAsSb achieves −162 arcsec, and the root-mean square (RMS) roughness for typical material growths has achieved around 1.6 Å over an area of . At room temperature, the photoluminescence (PL) spectrum shows a cutoff wavelength of .