Abstract
The magnetic transport properties of the double barrier magnetic tunnel junctions (DBMTJs) with amorphous Co–Fe–B electrodes, deposited by magnetron sputtering and patterned using optical lithography combined with lift-off technique, were investigated. A high tunnel magnetoresistance (TMR) ratio of 90.3% and 59.4%, resistance-area product of about 6.2 and 5.5 kΩ μm 2 at 4.2 K and room temperature, respectively, and a high bias voltage at which the TMR signal decreased to half of its maximum value, V 1/2 =1.14 V at negative bias voltage were measured experimentally for the DBMTJs. These results show that the DBMTJs are promising candidates for spin electronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.