Abstract
Magnetic fields are used to examine the anisotropic in-plane energy dispersion of the quantum well states of an AlAs/GaAs/AlAs double-barrier diode grown on a (3 1 1)A substrate. The measurements reveal biaxial anisotropy in some subbands. These features are confirmed by a six-component envelope-function calculation of the subbands of a (3 1 1) valence band quantum well.
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