Abstract
Measurements of the field dependent critical current density, J <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> (H), and the upper critical field, H <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c2</inf> , have been performed on a number of Nb <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Ge samples prepared by the chemical vapor deposition (CVD) process. These samples, obtained from up to 20 m lengths of Nb <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Ge tape, were deposited on various substrates at temperatures between 835 and 950°C. Flux pinning, provided by the introduction of controlled amounts of second phase precipitate, Nb <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> Ge <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> , produced good high field properties with 4.2 K critical current densities on the order of 8.3 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 18 T. Measurements of J <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> (H) performed on these samples in both liquid helium and hydrogen in fields up to 18.5T have been analyzed in terms of Kramer's model of flux pinning. Qualitative agreement has been found with the scaling laws predicted by this theory. The effect of ternary additions of Si and Ga on both H <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c2</inf> and J <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> (H) have been investigated as well. Contrary to expectation, the addition of ternaries into the A-15 lattice results in somewhat depressed critical characteristics. The effect of deposition parameters on the high field properties of both Nb <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Ge and Nb <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> (Ge,X) will be discussed.
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