Abstract
In this paper, we demonstrate a low-loss and high-linearity DC-38 GHz CMOS SPDT switch for 5G multi-band communications in 0.18 μm CMOS. Traveling-wave matching (CLCL network) is used for the output-port (ports 2 and 3) matching and isolation enhancement, while π-matching (CLC matching) is adopted for the input-port (port 1) matching. Positive/negative gate-bias is adopted for linearity enhancement because larger Pin (i.e., AC signal with larger negative Vin) is required to conduct the off-state series switch transistor. Negative-body bias is used for insertion-loss reduction because the off-state series switch transistor is closer to an open state. The SPDT switch achieves insertion loss of 0.4–1.4 dB, 3.6–4.3 dB, and 4.5–5.9 dB, respectively, for DC-6 GHz, 21–29 GHz, and 31–38 GHz. Moreover, the SPDT switch achieves isolation of 37.5–59.4 dB, 25.7–28.7 dB, and 24.3–25.2 dB, respectively, for DC-6 GHz, 21–29 GHz, and 31–38 GHz. At 28 GHz, the SPDT switch achieves remarkable input 1-dB compression point (IP1dB) of 25.6 dBm, close to the simulated one (28 dBm). To the authors’ knowledge, this is one of the best IP1dB results ever reported for millimeter-wave (mm-wave) SPDT switches.
Highlights
The 5G new radio (NR) frequency bands include the sub-6 GHz frequency range 1(FR1) and the 24.25–52.6 GHz frequency range 2 (FR2)
The double-pole single-throw (DPST) switch is equivalent to the combination of two single-pole single-throw (SPST) switches, while the double-pole double-throw (DPDT) switch is equivalent to the combination of two singlepole double-throw (SPDT) switches
Greater than 25 dBm), and wideband (covering the sub-6 GHz and the 28 GHz (IP1dB1dBgreater than 25 dBm), and wideband operation can be achieved for a CMOS SPDT, we propose a low insertion-loss, high bands) operation can be achieved for a CMOS SPDT, we propose a low insertion-loss, high isolation, and high-linearity CMOS SPDT switch with single-series-double-shunt transistor isolation, and high-linearity CMOS SPDT switch with single-series-double-shunt transisstructure and π/traveling-wave input/output matching for sub-6 GHz and 28 GHz 5G
Summary
(FR1) and the 24.25–52.6 GHz frequency range 2 (FR2). Compared with the compound semiconductor technologies [1], CMOS processes have the advantages of low cost and high integration [2,3,4,5,6]. In each path of the mm-wave phased-array transceivers, instead of using two independent antennas (i.e., one receive antenna and one transmit antenna), the SPDT switch can be used for switching between the transmit mode and the receive mode This leads to a 50% reduction of the required number of antennas. 1dB shunt transistor structure is commonly used due to its low insertion loss, high isolation, transistor structure is commonly used due to its low insertion loss, high isolation, good good power performance, and small [6] This switch structure normallyexhibits exhibits power performance, and small area area switch structure normally smallinput inputand andoutput outputmatching matchingbandwidth bandwidth from DC to several small several GHz, GHz,so soititisisnot notapplicable applicato to thethe mm-wave band. SPDT switch structures normally exhibit medium insertion-loss (or gain) bandwidth the center frequency, not including the sub-6.
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