Abstract
AbstractIn this article, adaptive bias circuit and PBG structure have been employed to achieve high power added efficiency (PAE) and high third‐order intermodulation (IM3) suppression in power amplifier simultaneously. The dc bias voltage of the gate in FET has been controlled by envelope of the input signal. The PBG structure has been employed to suppress IM3 on the output port of the power amplifier. The PBG structure was optimized to suppress the second harmonics of the amplifier. IM3 and PAE of the proposed power amplifier using adaptive bias circuit and PBG structure has been improved by 2.73 dBc, and by 35.54%, respectively. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 443–446, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22158
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