Abstract
This paper proposes a high linearity two-stage InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier monolithic microwave integrated circuit (MMIC), using a new on-chip linearizer, for 1.95 GHz wide-band code division multiple-access (W-CDMA) systems. The linearizer consists of the base-emitter junction diode of the bias transistor and the RF coupling capacitor. The proposed linearizer has a remarkably improved gain compression of 18 dB and phase distortion of 20/spl deg/, and has negligibly little insertion power loss, and more importantly it requires no additional die area and no additional DC consumption. The HBT MMIC power amplifier, with the integrated linearizer, exhibits a maximum output power (P/sub out/) of 30.5 dBm, a power gain of 25 dB, a power added efficiency (PAE) of 51%, at the maximum output power, under an operation voltage of 3.4 V, and adjacent channel power ratio (ACPR) of -56 dBc at P/sub out/ of 27 dBm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
