Abstract
Silicon oxide hemispherical microlens with the density of 9.5×108cm−2 was formed on gallium nitride light emitting diode to enhance the light extraction efficiency by liquid phase deposition. The light output power exhibits 1.29 times enhancement compared to that without microlens. After the thermal annealing with nitrous oxide, the output power is further improved to 1.44 times due to higher silicon oxide quality and gallium nitride surface passivation.
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