High-k titanium–aluminum oxide dielectric films prepared by inorganic–organic hybrid solution

Abstract

In this paper, high-k titanium–aluminum oxide (ATO) dielectric film has been realized by using organic–inorganic hybrid precursor solution. X-ray diffraction pattern revealed that the ATO films (Ti content less than 67 at%) remain amorphous phase for annealing treatment at 400 °C. And all of the amorphous ATO films had very smooth and uniform surface with root mean square (RMS) roughness of less than 0.5 nm. Meanwhile, the results showed that the ATO film (Ti:Al = 1:8) had the best performance, including RMS roughness of 0.33 nm, relative permittivity of 15, and leakage current density of 1.41 × 10−6 A/cm2 at 1 MV/cm.