Abstract
Understanding the properties of small molecules or monomers is decidedly important. The efforts of synthetic chemists and material engineers must be appreciated because of their knowledge of how utilize the properties of synthetic fragments in constructing long-chain macromolecules. Scientists active in this area of macromolecular science have shared their knowledge of catalysts, monomers and a variety of designed nanoparticles in synthetic techniques that create all sorts of nanocomposite polymer stuffs. Such materials are now an integral part of the contemporary world. Polymer nanocomposites with high dielectric constant (high-k) properties are widely applicable in the technological sectors including gate dielectrics, actuators, infrared detectors, tunable capacitors, electro optic devices, organic field-effect transistors (OFETs), and sensors. In this short colloquy, we provided an overview of a few remarkable high-k polymer nanocomposites of material science interest from recent decades.
Highlights
The discovery of polymers has given a new dimension to the present era: this relatively young subdivision of chemistry has been the topic of great development both as a basic and applied science over last five decades [1,2,3,4,5,6]
The scale of the k value is fixed on the dielectric constant of silicon dioxide (SiO2 )
Due to the increasing demand for flexible and soft smart devices, our research group fabricated soft vibrotactile actuators based on silicon dioxide nanoparticles embedded in plasticized polyvinyl chloride (PVC) gels
Summary
The discovery of polymers has given a new dimension to the present era: this relatively young subdivision of chemistry has been the topic of great development both as a basic and applied science over last five decades [1,2,3,4,5,6]. Various high-k materials are used by replacing SiO2 to diminish the leakage current and boost the power consumption, which perceptibly increases the gate capacitance of MOSFETs. where κ is the relative dielectric constant of the material used (= 3.9 for SiO2 ), A is the area of the capacitor and t is the thickness of the capacitor oxide insulator [31,32]. The ε’ is temperature dependent, because the charge mobility depends on the temperature, the polarization of the material requires a finite amount of time, and frequency of the applied electric field [36,37,38] This leads to a frictional damping mechanism [39] which creates the power loss, because work must be performed to overcome these damping forces [40,41]
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