High-k polymer dielectrics with different cross-linked networks for nonvolatile transistor memory device

Abstract

Nonvolatile OFET memory devices using different pPFPA/bPEI cross-linked polymers as the dielectric layer are fabricated. The influence of bPEI content on the electrical property and memory performance of devices are systematically investigated. The results demonstrate that the introduction of bPEI into pPFPA can significantly enhance the capacitance and dielectric constant of the pPFPA/bPEI cross-linked polymer dielectrics, but it also causes a slight increase in the leakage current density. Besides, the excess bPEI induces more morphology defects of the semiconductor film, leading to an apparent decrement in charge mobility. Transistors with the 119:250 pPFPA/bPEI dielectric layer exhibit the highest on/off current ratio (~107 at Vg = − 20V) and a relatively low hole mobility of 0.38 cm2 V−1s−1. Moreover, the corresponding memory devices show good reliability in information record with a data retention time over 105 s, indicating that an appropriate amount of bPEI is crucial for improving the stability of the memory devices.