Abstract
The radiation response of four different high-k materials has been investigated by irradiating them using a 979 MBq Cs137 γ-ray source and a dose absorption rate of 0.71rad(Si)∕s. Acceptorlike electron traps and donorlike traps were observed in HfO2 and ZrO2 metal-oxide-semiconductor capacitors originating from radiation-induced defects. A lower density of donor-like traps were created in LaAlO3 and NdAlO3 capacitors, but both electron and hole trapping play a role in shifting the flat band voltage. The radiation hardness of the LaAlO3 and NdAlO3 thin films is similar to thermal SiO2 but better than the HfO2 and ZrO2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
