Abstract
Organic transistors are crucial components in future flexible electronics due to their excellent properties and ease of circuit integration. Previously, we demonstrated that flexible organic (polyimide) thermal transistors could be prepared using commercial graphite paper as the substrate. These materials exhibited excellent temperature sensitivity, linearity and recoverability due to the intrinsically high thermal conductivity of graphite. In this study, boron nitride (BN) sheets/polyimide hybrid dielectric layers were synthesized for the fabrication of flexible organic transistors using a commercial graphite paper. Under test, the results showed that the introduction of BN sheets was beneficial in improving the mobility and transistor characteristics of the device, as well as enhancing the overall stability. The as-fabricated transistors virtually exhibited no hysteresis at all BN contents.
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