Abstract
This article presents a wide band compact high isolation photoconductive switch, which is based on the series-shunt switch design with three photoconductive switches made of diced high-resistivity silicon wafer placed over a microstrip gap and activated by 808-nm near-infrared laser diodes. The switch shows an insertion loss of 1.2 dB and an isolation of 44.8 dB at 2 GHz. It is easy to operate and control by light, high-speed, electromagnetically transparent and it does not require any biasing circuits. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1168–1170, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27507
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