Abstract
Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ-Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [δ-Bi2O3/YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk.
Highlights
The charge and mass transport in oxide thin films could be tuned by the lattice strain engineering resulting in a new class of materials that can be considered fundamental bricks of new generation of devices for energy storage, conversion, and information
Oxide heterostructures are a very promising type of artificial materials owing to possibility to manipulate the ionic and electronic properties at the interfaces by controlling the properties of the different layers, e.g., epitaxial strain.[1,2,3,4,5,6]
In these heterostructures, when the number of the interfaces is increased, size effects of the layers play a major role and can lead, for example, to enhanced mobility and conductivity of the charge carries at these interfaces.[2,3,4,5,6]
Summary
The charge and mass transport in oxide thin films could be tuned by the lattice strain engineering resulting in a new class of materials that can be considered fundamental bricks of new generation of devices for energy storage, conversion, and information. High ionic conductivity in confined bismuth oxide-based heterostructures
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