High internal quantum efficiency ZnO nanorods prepared at low temperature

Abstract

A preparation process for ZnO nanorods (or nanowires) by use of electrochemical deposition in an aqueous solution of zinc nitrate and nitric acid at temperatures 75°C was established. The surface morphologies of ZnO nanostructures can be adjusted with constant high internal quantum efficiency (IQE). The as-grown ZnO nanostructures exhibit a dominant and intense near-band-edge emission. The ZnO nanostructures present an IQE of ∼28% measured by a He–Cd laser under excitation power density of ∼22W∕cm2 at a wavelength of 325nm.