Abstract
To enhance the performance of green light-emitting diodes (LEDs), numerical analysis of structural engineering of conventional LED has been presented. Our proposed structure with composition-graded electron blocking layer as well as thickness-graded last quantum barrier and last quantum well shows improved radiative recombination rate, lower efficiency droop and higher light output power at high current density in comparison to other devices. The observed improvements are because of better electron and hole confinement as well as improved hole transportation inside the active region.
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