Abstract
Due to their low parasitic capacitance, minimal substrate losses, and high inductance values, three-dimensional MEMS inductors are increasingly used in microelectronics applications, such as MEMS sensors, RF MEMS, and energy storage devices. Conventional fabrication techniques, including UV-LIGA lithography and through‑silicon vias (TSV), are commonly employed to create high-aspect-ratio structures for 3D inductors. However, these processes are often complex and challenging. To simplify the process, we proposed a novel fabrication method for arched inductors utilizing non-photosensitive polyimide. The high viscosity of polyimide facilitates the formation of sloped sidewalls during development, eliminating the need for high-aspect-ratio structures in the inductor fabrication. By controlling the development time, we achieve the desired polyimide sidewall morphology. Additionally, to achieve high inductance, a high-permeability Co-based amorphous alloy wire was used as the magnetic core of the inductor. The maximum inductance of the inductor can reach 1710 nH at an excitation frequency of 71.4 MHz.
Published Version
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