Abstract
High indium content In0.78Ga0.22As photodetector structures have been grown on InP substrates with InxGa1-xAs or InxAl1-xAs graded buffer layers wherein x changed continuously by gas source molecular beam epitaxy.Their characteristics were investigated by atomic force microscope,x-ray diffraction,transmission electron microscopy and photoluminescence.The differences between samples with the two kinds of buffer layers were studied.Results show that moderate surface morphology can be obtained with either InxGa1-xAs or InxAl1-xAs buffer layers.Larger residual strain is present in the photodetector structure with InxGa1-xAs buffer layer.On the other hand,superior optical characteristics have been observed for the photodetector structure with InxAl1-xAs buffer layer.
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