High hysteresis and distinctive optoelectronic memory effect for ambipolar thin-film transistors using a conjugated polymer having donor–acceptor heterojunction

Abstract

π-Conjugated p-type PBDB-T and n-type N2200 macromolecular units are alternatively bonded to generate ambipolar copolymer (i.e. P(BDBT-co-N2200)) for achieving donor-acceptor (D-A) heterojunction. From the laser confocal microscope photoluminescence (PL) spectra of the P(BDBT-co-N2200) copolymer, PL characteristic peaks of PBDB-T and N2200 are simultaneously observed at 695, 760, and 860 nm. The thin-film transistors (TFTs) using P(BDBT-co-N2200) copolymer show ambipolar transistor characteristics originating from the coexistence of p-type and n-type semiconducting macromolecular units. Interestingly, a high hysteresis is observed in the transfer and output characteristics of the TFTs because of the interface traps and near-interface bulk traps. Under light irradiation, distinctive photocurrents and hysteresis are observed, suggesting the optically mediated charge release and photogating effects caused by trap states. Charge trapping with a high hysteresis and photoconduction with the photogating effect of the P(BDBT-co-N2200)-based ambipolar TFTs induce stable and repeatable writing, reading, and erasing operations. The optoelectronic memory devices using the P(BDBT-co-N2200)-based ambipolar TFTs are realized with the merit of a long charge storage time of 40 s. The π-conjugated copolymer, P(BDBT-co-N2200) exhibiting D–A heterojunction, can be applied to multifunctional devices, such as photoresponsive ambipolar transistors and optoelectronic memory devices, for image sensing and data storage. Optoelectronic memory devices using the ambipolar thin-film transistors of π-conjugated P(BDBT-co-N2200) copolymer having donor-acceptor heterojunction are realized with the merit of a long charge storage time. • π-Conjugated p-type PBDB-T and n-type N2200 macromolecular units were alternatively bonded to generate ambipolar copolymer with donor-acceptor (D-A) heterojunction. • The P(BDBT-co-N2200)-based TFT showed photoresponsive ambipolar transistor characteristics. • The P(BDBT-co-N2200)-based ambipolar TFTs were successfully operated as optoelectronic memory devices with repeatable writing, reading, and erasing processes. • Readout current charges were constant regardless of the variation in waiting times and linearly increased with increasing light exposure time.