Abstract
We investigated the effects of incorporation of 0%–2% tin (Sn) into amorphous germanium (Ge) on its crystallization behavior and electrical properties. Incorporation of only 0.2% Sn caused the polycrystallization temperature of Ge to lower from 450 to 430 °C, while a polycrystalline Ge1−xSnx layer with high crystallinity compared to that of polycrystalline Ge was formed by incorporation of 2% Sn. A polycrystalline Ge1−xSnx layer with a low Sn content of 2% annealed at 450 °C exhibited a Hall hole mobility as high as 130 cm2/V s at room temperature even though it possessed a small grain size of 20–30 nm. The Hall hole mobility of a poly-Ge1−xSnx layer with an Sn content of 2% was four times higher than that of a polycrystalline Ge layer and comparable to that of single-crystalline silicon.
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